英国采购需求：直径、电子束抗蚀剂、磷化铟晶片、布局、微机电系统、场效应晶体管
原文：diameter,electron beam resist,indium phosphide wafer,layout,micro electro mechanical sysytems,mosfets
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英国
- 2025-05-24
- max.****@****ics.ox.ac.uk
- 075****7236
采购商询盘内容
I'm reaching out to inquire about the availability of InSb p-type wafers for our lab. We are specifically looking for wafers doped with Ge, with a desired carrier concentration in the range of 1E13 to 5E14 at 77K. Additionally, the orientation should be (111)A to meet our project requirements.
Please let me know what options you have and any relevant details regarding your products. Your assistance in this matter would be greatly appreciated, and I look forward to your prompt response.
我联系您，想咨询一下我们实验室是否有 InSb p 型晶片。我们正在寻找掺杂 Ge 的晶片，其所需载流子浓度在 77K 时在 1E13 到 5E14 范围内。此外，为了满足我们的项目要求，晶向应为 (111)A。
请告知我您有哪些选择以及任何与产品相关的细节。非常感谢您的帮助，并期待您的及时回复。
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